Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient (Note 2)

83

℃

/W

Electrical characteristics at Ta =25℃ (Note 3)

Parameter

Symbol

Test conditions

Min.

Typ.

Max. Units

Source to Source

Breakdown Voltage

IS = 1 mA, VGS = 0 V

(Test Circuit 1)

12

V

Zero-Gate Voltage

Source Current

VSS = 10 V, VGS = 0 V

1

A

Gate to Source Leakage

Current

VGS = ±8V, VSS = 0 V

(Test Circuit 2)

±1

Gate Threshold Voltage

VSS = 6 V, IS = 1 mA

(Test Circuit 3)

0.4

1.3

V

Static Source to

Source On-State

Resistance

I

S = 5 A, VGS = 4.5 V

(Test Circuit 4)

3.1

4.5

5.9

I

S = 5 A, VGS = 3.8 V

(Test Circuit 4)

3.5

5.0

6.5

IS = 5 A, VGS = 3.1 V

(Test Circuit 4)

4.0

5.8

8.2

IS = 5 A, VGS = 2.5 V

(Test Circuit 4)

5.2

7.5

11.0

Turn-ON Delay Time

VSS = 6 V, VGS = 4.5 V,

I

S = 3 A

(Test Circuit 5)

180

ns

Rise Time

tr

300

ns

Turn-OFF Delay Time

1,700

ns

Fall Time

tf

660

ns

Total Gate Charge

Qg

VSS = 6 V, VGS = 4.5V,

I

S = 15 A

(Test Circuit 6)

36

nC

Forward Source to

Source Voltage

VF(S-S) IS=3A, VGS=0

(Test Circuit 7)

0.76

V

Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test

conditions, unless otherwise noted.Product performance may not be indicated by the Electrical

Characteristics if operated under different conditions.

A

2019. 08. 16

2/7

Revision No : 0

FTK15N12CSDFN

(Test Circuit 1)