FTK1013 datasheet(2/6 Pages) FS

2 / 6 page

2014. 01. 13

2/6

Revision No : 0

FTK1013

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 A

–0.45

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 4.5 V

VDS = –16 V, VGS = 0 V

–0.3

–100

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 85 C

–5

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–700

VGS = –4.5 V, ID = –350 mA

0.8

1.2

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –300 m A

1.2

1.6

DS(on)

VGS = –1.8 V, ID = –10 m A

1.8

2.7

Forward Transconductancea

gfs

VDS = –10 V, ID = –250 mA

0.4

Diode Forward Voltagea

VSD

IS = –150 mA, VGS = 0 V

–0.8

–1.2

Dynamicb

Total Gate Charge

1500

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –250 mA

150

Gate-Drain Charge

Qgd

450

Turn-On Delay Time

td(on)

Rise Time

VDD = –10 V, RL = 47

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 47

–200 mA, VGEN = –4.5 V, RG = 10

Fall Time

Notes

a. Pulse test; pulse width

300 s, duty cycle

2%.

b. Guaranteed by design, not subject to production testing.

FTK1013 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

FTK1013 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL