2SA921 datasheet(1/2 Pages) PANASONIC

tên linh kiện	2SA921

Giải thích chi tiết về linh kiện	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

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Transistor

2SA921

Silicon PNP epitaxial planer type

For high breakdown voltage low-noise amplification

Complementary to 2SC1980

s Features

q

High collector to emitter voltage VCEO.

q

Low noise voltage NV.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–120

–5

–50

–20

250

150

–55 ~ +150

Unit

V

mA

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Noise voltage

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

NV

Conditions

VCB = –50V, IE = 0

VCE = –50V, IB = 0

IC = –10µA, IE = 0

IC = –1mA, IB = 0

IE = –10µA, IC = 0

VCE = –5V, IC = –2mA

IC = –20mA, IB = –2mA

VCB = –5V, IE = 2mA, f = 200MHz

VCE = –40V, IC = –1mA, GV = 80dB

Rg = 100kΩ, Function FLAT

min

–120

–5

180

typ

200

max

–100

–1

520

– 0.6

150

Unit

nA

µA

V

MHz

mV

*h

FE Rank classification

Rank

R

S

hFE

180 ~ 360

260 ~ 520

Số phần tương tự - 2SA921

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Panasonic Semiconductor	2SA921	37Kb / 2P	Silicon NPN epitaxial planer type
Panasonic Semiconductor	2SA921	71Kb / 3P	For high breakdown voltage low-noise amplification Complementary

More results

Mô tả tương tự - 2SA921

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Panasonic Semiconductor	2SB1220	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB1463	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB788	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB792	37Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SC2631	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC2632	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC4715	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SD1821	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD814	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD958	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

More results

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