INA821 datasheet(19/44 Pages) TI

tên linh kiện	INA821

Giải thích chi tiết về linh kiện	INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

PDF	44 Pages

Scroll/Zoom	100%

nhà sản xuất	TI [Texas Instruments]

Trang chủ	http://www.ti.com

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19 / 44 page

6.7 Typical Characteristics (continued)

at TA = 25°C, VS = ±18 V, VCM =VOUT = VS / 2, RL = 10 kΩ, REF pin connected to ground, and G = 1/2 (unless otherwise

noted)

Capactiance (pF)

100

1000

RISO = 0

RISO = 25

RISO = 50

VS = ±18 V

Figure 6-49. Small-Signal Overshoot vs Capacitive Load G = 1/2

Capactiance (pF)

100

1000

RISO = 0

RISO = 25

RISO = 50

VS = ±18 V

Figure 6-50. Small-Signal Overshoot vs Capacitive Load G = 2

Time (1 Ps/div)

VIN

VOUT

VS = ±18 V

Figure 6-51. Small-Signal Step Response G = 1/2

Time (1 Ps/div)

VIN

VOUT

VS = ±18 V

Figure 6-52. Small-Signal Step Response G = 2

Frequency (Hz)

0.0001

0.001

0.01

0.1

100

10k

-120

-100

-80

-60

-40

RLoad = 10k :

RLoad = 2k :

RLoad = 600 :

VS = ±18 V

VOUT = 3.5 Vrms

Figure 6-53. THD+N vs Frequency G = 1/2

Frequency (Hz)

0.0001

0.001

0.01

0.1

100

10k

-120

-100

-80

-60

-40

RLoad = 10k :

RLoad = 2k :

RLoad = 600 :

VS = ±18 V

Vout = 3.5 Vrms

Figure 6-54. THD+N vs Frequency G = 2

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INA592

SBOS914D – OCTOBER 2018 – REVISED DECEMBER 2020

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