MTP23P06VG datasheet(2/7 Pages) VBSEMI

2 / 7 page

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = - 250 µA

- 60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

- 2.0

- 3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 60 V, VGS = 0 V, TJ = 175 °C

- 150

On-State Drain Currentb

ID(on)

VDS = - 5 V, VGS = - 10 V

- 10

Drain-Source On-State Resistanceb

rDS(on)

VGS = - 10 V, ID = - 5 A

0.200

VGS = - 10 V, ID = - 5 A, TJ = 125 °C

VGS = - 10 V, ID = - 5 A, TJ = 175 °C

0.300

VGS = - 4.5 V, ID = - 2 A

0.120

Forward Transconductanceb

gfs

VDS = - 15 V, ID = - 5 A

Dynamic

Input Capacitance

Ciss

VDS = - 25 V, VGS = 0 V, f = 1 MHz

850

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

3.2

Gate Resistance

f = 1 MHz

8.0

Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 3.57 Ω

ID ≅ - 8.4 A, VGEN = - 10 V, RG = 2.5 Ω

510

Rise Timec

Turn-Off Delay Timec

td(off)

Fall Timec

712

Source-Drain Diode Ratings and Characteristics (TC = 25 °C)

Pulsed Current

ISM

- 20

Forward Voltageb

VSD

IF = - 2 A, VGS = 0 V

- 0.9

- 1.3

Reverse Recovery Time

trr

IF = - 8 A, di/dt = 100 A/µs

Reverse Recovery Time

Qrr

120

0.100

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www.VBsemi.tw

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