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2SC2406 bảng dữ liệu(PDF) 1 Page - Panasonic Semiconductor |
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2SC2406 bảng dữ liệu(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 s Features q Low noise voltage NV. q High foward current transfer ratio hFE. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 2SA1034 2SA1035 2SA1034 2SA1035 s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage Symbol ICBO ICEO VCBO VCEO VEBO hFE *1 VCE(sat) VBE fT NV Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –2mA IC = –100mA, IB = –10mA *2 VCE = –1V, IC = –100mA *2 VCB = –5V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min –35 –55 –35 –55 –5 180 typ – 0.7 200 max –100 –1 700 – 0.6 –1.0 150 Unit nA µA V V V V V MHz mV *h FE1 Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SA1034 FR FS FT 2SA1035 HR HS HT Marking symbol : F(2SA1034) H(2SA1035) Unit: mm 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 *2 Pulse measurement Marking Symbol 2SA1034 2SA1035 2SA1034 2SA1035 |
Số phần tương tự - 2SC2406 |
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Mô tả tương tự - 2SC2406 |
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