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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 7 April 2005

5 of 11

Philips Semiconductors

PESDxV4UG series

Very low capacitance quadruple ESD protection diode arrays

Fig 3.

Peak pulse power dissipation as a function of

Fig 4.

Relative variation of peak pulse power as a

function of junction temperature; typical values

(1) PESD3V3V4UG

(2) PESD5V0V4UG

PESD3V3V4UG

PESD5V0V4UG

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

Fig 6.

Relative variation of reverse leakage current as

a function of junction temperature; typical

values

006aaa261

10

10

(W)

1

0

200

150

50

100

001aaa633

0.4

0.8

1.2

0

05

4

23

1

006aaa262

10

12

8

14

16

(pF)

6

(1)

(2)

006aaa263

−100

150

100

050

−50

1

10