1

Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector–Emitter Sustaining Voltage — @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

• Monolithic Construction with Built–in Base–Emitter Shunt Resistors

• TO–220AB Compact Package

*MAXIMUM RATINGS

Rating

Symbol

TIP100,

TIP105

TIP101,

TIP106

TIP102,

TIP107

Unit

Collector–Emitter Voltage

VCEO

60

80

100

Vdc

Collector–Base Voltage

VCB

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

8.0

15

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

80

0.64

Watts

W/

_C

Unclamped Inductive Load Energy (1)

E

30

mJ

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.56

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.

80

0

0

20

40

60

80

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

40

20

60

140

TC

4.0

0

2.0

1.0

3.0

TA

TA

TC

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP100/D

TIP100

TIP101

TIP102

TIP105

TIP106

TIP107

DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 – 80 – 100 VOLTS

80 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

*

*

CASE 221A–06

TO–220AB

REV 7