IXSH30N60 datasheet(2/2 Pages) IXYS

2 / 2 page

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXSH 30N60

IXSM 30N60

IXSH 30N60A IXSM 30N60A

TO-247 AD Outline

Symbol

TestConditions

Characteristic Values

J = 25°C, unless otherwise specified)

min.

typ. max.

= I

C90; VCE = 10 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C(on)

GE = 15 V, VCE = 10 V

100

ies

2760

oes

CE = 25 V, VGE = 0 V, f = 1 MHz

240

res

110

150 nC

C = IC90, VGE = 15 V, VCE = 0.5 VCES

45 nC

63 nC

d(on)

130

d(off)

400

30N60

400

30N60A

200

off

30N60

5.0

30N60A

2.5

d(on)

130

1.0

d(off)

30N60

540 1000 ns

30N60A

340

525 ns

30N60

600 1500 ns

30N60A

340

700 ns

off

30N60

30N60A

thJC

0.63 K/W

thCK

0.25

K/W

IXSH 30N60 and IXSH 30N60A characteristic curves are located on the

IXSH 30N60U1 and IXSH 30N60AU1 data sheets.

TO-204AE Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

1 = Gate

2 = Emitter

Case = Collector

Inductive load, T

J = 25°C

C = IC90, VGE = 15 V, L = 100 µH

CE = 0.8 VCES, RG = 4.7 Ω

Remarks: Switching times

may increase for

CE (Clamp) > 0.8 VCES,

higher T

J or increased RG

Inductive load, T

J = 125°C

C = IC90, VGE = 15 V,

L = 100 µH

CE = 0.8 VCES,

G = 4.7 Ω

Remarks: Switching times

may increase for

CE (Clamp) > 0.8 VCES,

higher T

J or increased RG

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