IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXSH10N60

IXSH10N60A

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-247 AD Outline

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

2

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

I

C(on)

V

50

A

C

ies

750

pF

C

oes

V

125

pF

C

res

30

pF

Q

g

40

nC

Q

ge

I

12

nC

Q

gc

20

80

nC

t

d(on)

100

ns

t

ri

200

ns

t

d(off)

250

750

ns

t

fi

10N60A

175

410

n s

10N60

720

ns

E

off

10N60A

0.75

1.2

mJ

Note 1

10N60

1.2

1.9

mJ

t

d(on)

100

ns

t

ri

200

ns

E

on

1.0

mJ

t

d(off)

300

ns

t

fi

10N60AU1

400

ns

E

off

Note 1

10N60AU1

1.5

mJ

R

thJC

1.25

K/W

R

thCK

0.25

K/W

Inductive load, T

°°°°C

I

L = 300

µH, V

R

Notes:

1.

Switching times may increase for V

or R

G

values.

2.

Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

Inductive load, T

°°°°C

I

L = 300

µH, V

R