IXGP2N100 datasheet(2/2 Pages) IXYS

2 / 2 page

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP 2N100

IXGP 2N100A

Symbol

Test Conditions

Characteristic Values

J = 25°C unless otherwise specified)

Min. Typ.

Max.

= I

C90, VCE = 10 V,

0.7

1.5

Pulse test, t < 300 µs, duty cycle < 2 %

ies

CE = 25 V, VGE = 0 V, f = 1 MHz

101

oes

res

1.8

= I

c90, VGE = 15 V, VCE = 0.5 VCES

7.8

1.5

4.2

d(on)

Inductive load, T

J = 25°C

= I

C90, VGE = 15 V

d(off)

G = 150 W

300 600

VCLAMP = 0.8 V

CES

IXGP2N100

560 1000

IXGP2N100A

180 360

off

Note 1

IXGP2N100

0.56

1.2

IXGP2N100A

0.26

0.6

d(on)

Inductive load, T

J = 125°C

= I

C90, VGE = 15 V

(on)

G = R(off) = 150 W

0.3

d(off)

VCLAMP = 0.8 V

CES

400

Note 1

IXGP2N100

800

IXGP2N100A

360

IXGP2N100

1.0

off

IXGP2N100A

0.5

thJC

5 K/W

thJA

110 K/W

TO-220 Outline

The data herein reflects the advanced objective technical specification and characterization data from engineering lots.

Notes: 1. Switching times may increase for V

CE (Clamp) > 0.8 VCES,

higher T

J or increased RG.

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