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IXFN32N60 bảng dữ liệu(PDF) 2 Page - IXYS Corporation |
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IXFN32N60 bảng dữ liệu(HTML) 2 Page - IXYS Corporation |
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2 / 4 page ![]() IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Dim. miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 TO-264 AA Outline Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 10 V; I D = 0.5 ID25, pulse test 36 S C iss 9000 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 840 pF C rss 280 pF t d(on) 30 ns t r V GS = 10 V, V DS = 0.5 VDSS, ID = 0.5 ID25 45 ns t d(off) R G = 1 Ω (External), 100 ns t f 60 ns Q g(on) 325 nC Q gs V GS = 10 V, V DS = 0.5 VDSS, ID = 0.5 ID25 60 nC Q gd 120 nC R thJC TO-264 AA 0.25 K/W R thCK TO-264 AA 0.15 K/W R thJC miniBLOC, SOT-227 B 0.24 K/W R thCK miniBLOC, SOT-227 B 0.05 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. I S V GS = 0 36N60 36 A I S V GS = 0 32N60 32 A I SM Repetitive; pulse width limited by T JM 36N60 144 A 32N60 128 A V SD I F = IS A, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr 250 ns I RM 20 A I F = IS, -di/dt = 100 A/µs, VR = 100 V |
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