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Table 36. Flash command timing specifications for S32K14xW series (continued)
S32K142W
S32K144W
Symbol
Description-1
Typ
Max
Typ
Max
Unit
Notes
trdonce
Read Once
execution time
—
—
38
—
38
µs
tpgmonce
Program Once
execution time
—
100
—
100
—
µs
tersall
Erase All Blocks
execution time
—
160
2700
310
5300
ms
-1
tvfykey
Verify Backdoor
Access Key
execution time
—
—
45
—
45
µs
tersallu
Erase All Blocks
Unsecure execution
time
—
160
2700
310
5300
ms
-1
tpgmpart
Program Partition for
EEPROM execution
time
32 KB EEPROM
backup
77
—
77
—
ms
-1
64 KB EEPROM
backup
78
—
78
—
tsetram
Set FlexRAM
Function execution
time
Control Code 0xFF 0.10
—
0.10
—
ms
-1
32 KB EEPROM
backup
1.0
1.5
1.0
1.5
48 KB EEPROM
backup
1.2
1.8
1.2
1.8
64 KB EEPROM
backup
1.4
2.1
1.4
2.1
teewr32b
32-bit write to
FlexRAM execution
time
32 KB EEPROM
backup
690
2200
690
2200
µs
-1,-1
48 KB EEPROM
backup
790
2350
790
2350
64 KB EEPROM
backup
890
2500
890
2500
tquickwr
32-bit Quick Write
execution time: Time
from CCIF clearing
(start the write) until
CCIF setting (32-bit
write complete,
ready for next 32-bit
write)
1st 32-bit write
220
600
220
600
µs
-1,-1,-1
2nd through Next
to Last (Nth-1) 32-
bit write
165
600
165
600
Last (Nth) 32-bit
write (time for write
only, not cleanup)
220
600
220
600
tquickwrClnup
Quick Write Cleanup
execution time
—
—
(# of
Quick
Writes ) *
2.0
—
(# of
Quick
Writes ) *
2.0
ms
-1
Memory and memory interfaces
S32K1xx Data Sheet, Rev. 12, 02/2020
46
NXP Semiconductors



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