P1065ETFS datasheet(2/9 Pages) UNIKC

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P1065ETF / P1065ETFS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

650

2.8

±100

0.55

0.77

2017

167

8.5

136

451

5.8

1Pulse test : Pulse Width

 380 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

Gate Threshold Voltage

IF = 10A, dlF/dt = 100A / mS

STATIC

LIMITS

UNITS

VDS = 650V, VGS = 0V, TC = 25 °C

IGSS

IDSS

RDS(ON)

VDS = 520V, VGS = 0V , TC = 100 °C

VDS = 0V, VGS = ±30V

gfs

DYNAMIC

Drain-Source On-State

Resistance

VDS = VGS, ID = 250mA

VDD =520V, VGS = 10V, ID = 10A

Ciss

Coss

Crss

Qgd

Qgs

VGS = 0V, VDS = 25V, f = 1MHz

Drain-Source Breakdown Voltage

VGS = 10V, ID = 5A

VDS = 10V, ID = 5A

VGS(th)

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Gate Voltage Drain Current

Gate-Body Leakage

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Gate-Drain Charge

Total Gate Charge

Gate-Source Charge

Reverse Transfer Capacitance

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

IF = 10A, VGS = 0V

VDD = 325V, ID = 10A,

RG= 25Ω

td(on)

td(off)

Turn-On Delay Time

PARAMETER

SYMBOL

TEST CONDITIONS

REV 1.0

2017/1/25

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