P0908AT datasheet(2/5 Pages) UNIKC

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P0908AT

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

3.4

±100

8.1

2853

355

199

0.9

VGS = 10V

VGS = 7V

41.5

15.3

19.4

1.4

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

TEST CONDITIONS

STATIC

LIMITS

UNITS

PARAMETER

Rise Time

Turn-Off Delay Time

Fall Time

IF = 20A, VGS = 0V

VDD = 15V,

ID @ 20A, VGS = 10V, RGEN = 6Ω

td(on)

td(off)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Turn-On Delay Time

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

VGS = 10V, ID = 20A

VDS = 5V, ID = 20A

Qgd

Input Capacitance

Output Capacitance

VGS = 0V, VDS = 25V, f = 1MHz

Forward Transconductance

Zero Gate Voltage Drain Current

Gate-Body Leakage

Qgs

gfs

DYNAMIC

VGS = 7V, ID = 15A

Gate Threshold Voltage

VDS = VGS, ID = 250mA

VDS = 60V, VGS = 0V , TJ = 125 °C

Drain-Source Breakdown Voltage

VGS(th)

SYMBOL

V(BR)DSS

VGS = 0V, ID = 250mA

IF = 20A , dIs/dt= 100A/ms

VDS = 64V, VGS = 0V

IGSS

IDSS

VDS = 0V, VGS = ±20V

Ciss

VDS = 15V,ID = 20A

Coss

Crss

Total Gate Charge

Drain-Source On-State

Resistance

RDS(ON)

mΩ

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

REV 1.1

2014/10/30

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