MPSW63 MPSW64

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –10 mAdc, VCE = –5.0 Vdc)

MPSW63

MPSW64

(IC = –100 mAdc, VCE = –5.0 Vdc)

MPSW63

MPSW64

hFE

5,000

10,000

10,000

20,000

—

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = –100 mAdc, IB = –0.1 mAdc)

VCE(sat)

—

–1.5

Vdc

Base–Emitter On Voltage

(IC = –100 mAdc, VCE = –5.0 Vdc)

VBE(on)

—

–2.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(2)

(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)

fT

125

—

MHz

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

2. fT = |hfe| • ftest.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. “ON” Voltage

Figure 3. Collector Saturation Region

–1.0

–2.0

–0.5

IC, COLLECTOR CURRENT (mA)

200

50

5.0

3.0

2.0

–1.0

–100

–0.3

IC, COLLECTOR CURRENT (mA)

–1.6

–2.0

–0.8

–0.4

0

IB, BASE CURRENT (mA)

–0.6

–30

–10

–20

–7.0

–100

–200

–50

70

–3.0 –5.0

–10

–50

–2.0

–1.6

–1.4

–1.2

–1.0

–30

–70

–300

–5.0

–3.0

–0.7

30

100

–300

–1.2

–0.3

–100

–0.1

–1.0 –3.0

–10

–30

–300

–1 k

–0.3

10

7.0

20

–0.5

–3 k –10 k

–0.8

–1.8

TJ = 25°C

IC = –10 mA

–50 mA –100 mA –175 mA

–300 mA

TJ = 25°C

IC/IB = 100

TJ = 125°C

25

°C

–55

°C

–10 V

VCE = –2.0 V

–5.0 V

VBE(sat) @ IC/IB = 100

VCE(sat) @ IC/IB = 1000

VBE(on) @ VCE = –5.0 V