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Table 35. Flash command timing specifications for S32K14x series (continued)
Symbol
Description1
S32K142
S32K144
S32K146
S32K148
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit Notes
32 KB
EEPROM
backup
0.8
1.2
0.8
1.2
0.8
1.2
—
—
48 KB
EEPROM
backup
1
1.5
1
1.5
1
1.5
—
—
64 KB
EEPROM
backup
1.3
1.9
1.3
1.9
1.3
1.9
1.3
1.9
teewr8b
Byte write to
FlexRAM
execution time
32 KB
EEPROM
backup
385
1700
385
1700
385
1700
—
—
µs
3,4
48 KB
EEPROM
backup
430
1850
430
1850
430
1850
—
—
64 KB
EEPROM
backup
475
2000
475
2000
475
2000
475
4000
teewr16b
16-bit write to
FlexRAM
execution time
32 KB
EEPROM
backup
385
1700
385
1700
385
1700
—
—
µs
3,4
48 KB
EEPROM
backup
430
1850
430
1850
430
1850
—
—
64 KB
EEPROM
backup
475
2000
475
2000
475
2000
475
4000
teewr32bers
32-bit write to
erased FlexRAM
location
execution time
—
360
2000
360
2000
360
2000
360
2000
µs
teewr32b
32-bit write to
FlexRAM
execution time
32 KB
EEPROM
backup
630
2000
630
2000
630
2000
—
—
µs
3,4
48 KB
EEPROM
backup
720
2125
720
2125
720
2125
—
—
64 KB
EEPROM
backup
810
2250
810
2250
810
2250
810
4500
tquickwr
32-bit Quick
Write execution
time: Time from
CCIF clearing
(start the write)
until CCIF
setting (32-bit
1st 32-bit
write
200
550
200
550
200
550
200
1100
µs
4,5,6
2nd through
Next to Last
(Nth-1) 32-
bit write
150
550
150
550
150
550
150
550
Table continues on the next page...
Memory and memory interfaces
S32K1xx Data Sheet, Rev. 12, 02/2020
44
NXP Semiconductors



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