TN2124 datasheet(3/14 Pages) MICROCHIP

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AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is

not 100% tested.

Parameter

Sym. Min. Typ. Max.

Unit

Conditions

Forward Transconductance

GFS

100

170

—

mmho VDS = 25V, ID = 120 mA

Input Capacitance

CISS

—

VGS = 0V, VDS = 25V,

f = 1 MHz

Common Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON)

—

VDD = 25V, ID = 140 mA, 

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF) —

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.8

VGS = 0V, ISD = 120 mA (Note 1)

Reverse Recovery Time

trr

—

400

—

VGS = 0V, ISD = 120 mA

Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty

cycle

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, for all specifications TA = TJ = +25°C.

Parameter

Sym. Min.

Typ. Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-23

JA

—

203

—

°C/W

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(mA)

Power Dissipation

at TA = 25°C

(W)

IDR (Note 1)

(mA)

IDRM

(mA)

3-lead SOT-23

134

250

0.36

134

250

Note 1: ID (continuous) is limited by maximum TJ.

 2018 Microchip Technology Inc.

DS20005698A-page 3

TN2124

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