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TC6320 bảng dữ liệu(PDF) 1 Page - Microchip Technology

tên linh kiện TC6320
Giải thích chi tiết về linh kiện  N-Channel and P-Channel Enhancement-Mode MOSFET Pair
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nhà sản xuất  MICROCHIP [Microchip Technology]
Trang chủ  http://www.microchip.com
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 2017 Microchip Technology Inc.
DS20005697A-page 1
TC6320
Features
• Integrated Gate-to-source Resistor
• Integrated Gate-to-source Zener Diode
• Low Threshold
• Low On-resistance
• Low Input Capacitance
• Fast Switching Speeds
• Free from Secondary Breakdown
• Low Input and Output Leakage
• Independent Electrically Isolated N-channel and
P-channel
Applications
• High-voltage Pulsers
• Amplifiers
•Buffers
• Piezoelectric Transducer Drivers
• General Purpose Line Drivers
• Logic-level Interfaces
General Description
The TC6320 consists of high-voltage, low-threshold
N-channel and P-channel MOSFETs in 8-lead SOIC
and DFN packages. Both MOSFETs have integrated
gate-to-source resistors and gate-to-source Zener
diode clamps which are desired for high-voltage pulser
applications. It is a complimentary, high-speed,
high-voltage, gate-clamped N-channel and P-channel
MOSFET pair, which utilizes an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and with the high input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
Package Type
8-lead SOIC
(Top view)
See Table 2-1 and Table 2-2 for pin information.
8
7
6
5
1
2
3
4
SN
GN
SP
GP
DN
DN
DP
DP
5-lead DFN
(Top view)
8
7
6
5
1
2
3
4
SN
GN
GP
SP
DN
DN
DP
DP
DN
DP
s
N-Channel and P-Channel Enhancement-Mode MOSFET Pair


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