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5LP01C bảng dữ liệu(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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5LP01C bảng dữ liệu(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 7 page ![]() Notes: a. Pulse test: PW 300 µs duty cycle 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ.a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 10 µA - 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µA VDS = 0 V, VGS = ± 10 V ± 200 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 25 VDS = - 60 V, VGS = 0 V, TJ = 85 °C - 250 On-State Drain Currenta ID(on) VGS = - 10 V, VDS = - 4.5 V - 50 mA VGS = - 10 V, VDS = - 10 V - 600 Drain-Source On-Resistancea RDS(on) VGS = - 4.5 V, ID = - 25 mA 4 VGS = - 10 V, ID = - 100 mA 3 VGS = - 10 V, ID = - 100 mA, TJ =125 °C 9 Forward Transconductancea gfs VDS = - 10 V, ID = - 100 mA 80 mS Diode Forward Voltage VSD IS = - 100 mA, VGS = 0 V - 1.4 V Dynamic Total Gate Charge Qg VDS = - 30 V, VGS = - 15 V ID - 100 mA 2.0 nC Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 0.8 Input Capacitance Ciss VDS = - 25 V, VGS = 0 V f = 1 MHz 23 pF Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Switchingb Turn-On Time td(on) VDD = - 25 V, RL = 150 ID - 200 mA, VGEN = - 10 V, Rg = 10 20 ns Turn-Off Time td(off) 35 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 5LP01C 2 |
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