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5LP01C bảng dữ liệu(PDF) 2 Page - VBsemi Electronics Co.,Ltd

tên linh kiện 5LP01C
Giải thích chi tiết về linh kiện  P-Channel 60 V (D-S) MOSFET
PDF  7 Pages
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nhà sản xuất  VBSEMI [VBsemi Electronics Co.,Ltd]
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Notes:
a. Pulse test: PW
 300 µs duty cycle  2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.a
Max.
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 10 µA
- 60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 10
µA
VDS = 0 V, VGS = ± 10 V
± 200
nA
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 500
VDS = 0 V, VGS = ± 5 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
- 25
VDS = - 60 V, VGS = 0 V, TJ = 85 °C
- 250
On-State Drain Currenta
ID(on)
VGS = - 10 V, VDS = - 4.5 V
- 50
mA
VGS = - 10 V, VDS = - 10 V
- 600
Drain-Source On-Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 25 mA
4
VGS = - 10 V, ID = - 100 mA
3
VGS = - 10 V, ID = - 100 mA, TJ =125 °C
9
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 100 mA
80
mS
Diode Forward Voltage
VSD
IS = - 100 mA, VGS = 0 V
- 1.4
V
Dynamic
Total Gate Charge
Qg
VDS = - 30 V, VGS = - 15 V
ID  - 100 mA
2.0
nC
Gate-Source Charge
Qgs
1.2
Gate-Drain Charge
Qgd
0.8
Input Capacitance
Ciss
VDS = - 25 V, VGS = 0 V
f = 1 MHz
23
pF
Output Capacitance
Coss
10
Reverse Transfer Capacitance
Crss
5
Switchingb
Turn-On Time
td(on)
VDD = - 25 V, RL = 150 
ID  - 200 mA, VGEN = - 10 V, Rg = 10 
20
ns
Turn-Off Time
td(off)
35
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
5LP01C
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