NVMFS024N06C datasheet(2/6 Pages) ONSEMI

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NVMFS024N06C

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

ID = 250 mA, ref to 25°C

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 60 V

TJ = 25°C

TJ = 125°C

250

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 20 mA

2.0

4.0

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

ID = 17 mA, ref to 25°C

−7.8

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 3 A

18.3

Forward Transconductance

gFS

VDS = 5 V, ID = 3 A

Gate Resistance

TA = 25°C

0.8

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 30 V

333

Output Capacitance

COSS

225

Reverse Transfer Capacitance

CRSS

5.05

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 48 V; ID = 3 A

5.7

Threshold Gate Charge

QG(TH)

1.3

Gate−to−Source Charge

QGS

2.0

Gate−to−Drain Charge

QGD

0.68

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 48 V,

ID = 3 A, RG = 6.0 W

6.6

Rise Time

1.3

Turn−Off Delay Time

td(OFF)

Fall Time

3.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 3 A

TJ = 25°C

0.8

1.2

TJ = 125°C

0.66

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

VDS = 30 V, IS = 3 A

Charge Time

Discharge Time

Reverse Recovery Charge

QRR

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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