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FMB1F bảng dữ liệu(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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FMB1F bảng dữ liệu(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page ![]() FMB1F THRU FMB10F MBF 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A FEATURES High current capability Low forward voltage drop Glass Passivated Chip Junction Low power loss, high efficiency Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: MBF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 75mg / 0.0026oz MBF Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols FMB1F FMB2F FMB4F FMB6F FMB8F FMB10F Units Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V Average Rectified Output Current at Tc = 125 °C Io 1 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load(JEDEC method) IFSM 35 A Forward Voltage per element at 1.0A VF 1.3 V @ TA=25°C 5 Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=125°C IR 50 μA Typical Junction Capacitance(Note1) Cj 15 pF Maximum Reverse Recovery Time (Note2) Trr Trr(typ) 500 300 nS Typical Thermal Resistance (Note3) RθJA RθJC 80 30 °C/W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 °C ( 1)Measured at 1 MHz and applied reverse voltage of 4 V D.C ( 2)Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm) copper pad. |
Số phần tương tự - FMB1F |
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Mô tả tương tự - FMB1F |
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