TMP64 datasheet(5/28 Pages) TI

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TMP64

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SNIS212B – DECEMBER 2019 – REVISED JUNE 2020

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended

OperatingConditions. Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage across pins 2 (+) and 1 (–)

Current through the device

+450

µA

Junction temperature (TJ)

–65

+150

°C

Storage temperature (Tstg)

–65

+150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM) per JESD22-A114 (1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VSns

Voltage across pins 2 (+) and 1 (–)

5.5

ISns

Current passing through the device

100

µA

Operating free-air temperature (specified performance) (X1SON/DEC Package)

–40

125

°C

(1)

The junction to ambient thermal resistance (RθJA ) under natural convection is obtained in a simulation on a JEDEC-standard, High-K

board as specified in JESD51-7, in an environment described in JESD51-2. Exposed pad packages assume that thermal vias are

included in the PCB, per JESD 51-5.

(2)

Changes in output due to self heating can be computed by multiplying the internal dissipation by the thermal resistance.

7.4 Thermal Information

THERMAL METRIC

TMP64

Units

DEC (X1SON)

DYA (SOT-5X3)

2 PINS

RθJA

Junction-to-ambient thermal resistance(1)(2)

443.4

742.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

195.7

315.8

°C/W

RθJB

Junction-to-board thermal resistance

254.6

506.2

°C/W

ΨJT

Junction-to-top characterization parameter

19.9

109.3

°C/W

ΨJB

Junction-to-board characterization parameter

254.5

500.4

°C/W

RθJC(bot)

Junction-to-case (bot) thermal resistance

–

°C/W

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