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WSP4404 bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

tên linh kiện WSP4404
Giải thích chi tiết về linh kiện  N-Ch MOSFET
PDF  7 Pages
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nhà sản xuất  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Trang chủ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP4404 bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSP4404 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4404 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4404 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4404 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4404 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4404 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSP4404 Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.023
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
8.4A
---
17
m
Ω
VGS=4.5V , ID=
2A
---
33
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.4
1.
9
2.8
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.08
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
8.4A
---
22
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.6
5.2
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
8.4A
---
3.7
---
nC
Qgs
Gate-Source Charge
---
1.6
---
Qgd
Gate-Drain Charge
---
1.3
---
Td(on)
Turn-On Delay Time
VDD=15V , VGS=
10V ,
RG=
1Ω ,ID=6.7A ,RL=2.2Ω.
---
20
30
ns
Tr
Rise Time
---
15
25
Td(off)
Turn-Off Delay Time
---
11
20
Tf
Fall Time
---
10
15
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
405
---
pF
Coss
Output Capacitance
---
110
---
Crss
Reverse Transfer Capacitance
---
56
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=
10A
5.0
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
4.2
A
ISM
Pulsed Source Current
2,6
---
---
40
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
6.7A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=6.7A , dI/dt=100A/µs , TJ=25℃
---
15
---
nS
Qrr
Reverse Recovery Charge
---
8
---
nC
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
WSP4404
Page 2
www.winsok.tw
Dec.2014
21
27
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.



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