WSP4088 datasheet(2/7 Pages) WIINSOK

2 / 7 page

N-Ch MOSFET

WSP4088

Page 2

www.winsok.tw

Dec.2014

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

VDS=32V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.5

1.8

2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=10V, IDS=7A

10.5

TJ=125°C

15.75

RDS(ON)

Drain-Source On-state Resistance

VGS=4.5V, IDS=5A

Gfs

Forward Transconductance

VDS=5V, IDS=15A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=10A, VGS=0V

0.9

1.1

trr

Reverse Recovery Time

15.2

Charge Time

9.4

Discharge Time

5.8

Qrr

Reverse Recovery Charge

VDD=20V,

ISD=10A, dlSD/dt=100A/ms

9.5

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

0.7

1.1

1.8

Ciss

Input Capacitance

1125

Coss

Output Capacitance

132

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=20V,

Frequency=1.0MHz

td(ON)

Turn-on Delay Time

12.6

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

23.6

Turn-off Fall Time

VDD=20V, RL=20W,

IDS=1A, VGEN=10V,

RG=1W

Gate Charge Characteristics

Total Gate Charge

VDS=20V, VGS=4.5V,

IDS=7A

9.4

Total Gate Charge

Qgth

Threshold Gate Charge

Qgs

Gate-Source Charge

3.9

VDS=20V, VGS=10V,

IDS=7A

Qgd

Gate-Drain Charge

Note c：Pulse test ; pulse width

£300ms, duty cycle£2%.

Electrical Characteristics (T

A = 25°C Unless Otherwise Noted)

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