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AS7C33512PFD32A bảng dữ liệu(PDF) 6 Page - Alliance Semiconductor Corporation

tên linh kiện AS7C33512PFD32A
Giải thích chi tiết về linh kiện  3.3V 512K x 32/36 pipelined burst synchronous SRAM
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AS7C33512PFD32A
AS7C33512PFD36A
2/10/05, v 1.3
Alliance Semiconductor
6 of 19
Write enable truth table (per byte)
Key: X = don’t care, L = low, H = high, n = a, b, c, d;
BWE, BWn = internal write signal.
Asynchronous Truth Table
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Function
GWE
BWE
BWa
BWb
BWc
BWd
Write All Bytes
L
X
XXX
X
H
L
LL
LL
Write Byte a
HL
LH
H
H
Write Byte c and d
HL
H
H
L
L
Read
HH
XXX
X
H
L
HHH
H
Operation
ZZ
OE
I/O Status
Snooze mode
H
X
High-Z
Read
L
L
Dout
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Interleaved burst address (LBO = 1)
Linear burst address (LBO = 0)
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
Starting Address
0 0
0 1
1 0
1 1
Starting Address
0 0
0 1
1 0
1 1
First Increment
0 1
0 0
1 1
1 0
First Increment
0 1
1 0
1 1
0 0
Second Increment
1 0
1 1
0 0
0 1
Second Increment
1 0
1 1
0 0
0 1
Third Increment
1 1
1 0
0 1
0 0
Third Increment
1 1
1 0
0 1
1 0



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