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WSF70N10 bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

tên linh kiện WSF70N10
Giải thích chi tiết về linh kiện  N-Ch MOSFET
PDF  7 Pages
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nhà sản xuất  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Trang chủ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF70N10 bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.096
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=30A
---
13
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2.0
3.0
4.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.5
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
27
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.
0
1.8
Ω
Qg
Total Gate Charge (10V)
VDS=80V , VGS=10V , ID=30A
---
42
---
nC
Qgs
Gate-Source Charge
---
12
---
Qgd
Gate-Drain Charge
---
12
---
Td(on)
Turn-On Delay Time
VDD=50V , VGS=10V , RG=3Ω,
ID=
1A
---
19
---
ns
Tr
Rise Time
---
9
---
Td(off)
Turn-Off Delay Time
---
36
---
Tf
Fall Time
---
22
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
2100
---
pF
Coss
Output Capacitance
---
2
55
---
Crss
Reverse Transfer Capacitance
---
100
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
5mH , IAS=26A
150
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
30
A
ISM
Pulsed Source Current
2,6
---
---
60
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1
5A , TJ=25℃
---
---
1.
3
V
trr
Reverse Recovery Time
IF=
15A,dI/dt=100A/µs,TJ=25℃
---
42
---
nS
Qrr
Reverse Recovery Charge
---
90
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDS=25V,VGS=10V,L=0.
5mH,IAS=26A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
N-Ch MOSFET
WSF70N10
Page 2
www.winsok.tw
Dec.2014
10



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