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WSF20N06 bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

tên linh kiện WSF20N06
Giải thích chi tiết về linh kiện  N-Ch MOSFET
PDF  5 Pages
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nhà sản xuất  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Trang chủ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF20N06 bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF20N06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF20N06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF20N06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF20N06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF20N06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.057
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=
10V , ID=16A
---
m
Ω
VGS=
5V , ID=8A
---
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.
0
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.68
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=
60V , VGS=0V , TJ=125℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±
16V , VDS=0V
---
---
±
10
nA
gfs
Forward Transconductance
VDS=
25V , ID=18A
---
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qg
Total Gate Charge (4.5V)
VDS=
30V , VGS=10V , ID=18A
---
20
---
nC
Qgs
Gate-Source Charge
---
7
---
Qgd
Gate-Drain Charge
---
5
---
Td(on)
Turn-On Delay Time
VDD=30V , VGS=10V ,
RG=
6.8Ω, ID=1A
---
18
---
ns
Tr
Rise Time
---
15
---
Td(off)
Turn-Off Delay Time
---
60
---
Tf
Fall Time
---
31
---
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
---
650
pF
Coss
Output Capacitance
---
95
---
Crss
Reverse Transfer Capacitance
---
60
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=15A
19
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
25
A
ISM
Pulsed Source Current
2,6
---
---
75
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
20A , TJ=25℃
---
---
1.3
V
trr
Reverse Recovery Time
---
65
---
nS
Qrr
Reverse Recovery Charge
---
85
---
nC
Note :
1.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
35
45
40
50
25
N-Ch MOSFET
WSF20N06
Page 2
www.winsok.tw
Dec.2014
The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
IF=20A ,dI/dt=100A/µs,TJ=25℃
---



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