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WSD20L75DN bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

tên linh kiện WSD20L75DN
Giải thích chi tiết về linh kiện  P-Ch MOSFET
PDF  5 Pages
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nhà sản xuất  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Trang chủ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSD20L75DN bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSD20L75DN Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD20L75DN Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD20L75DN Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD20L75DN Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSD20L75DN Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.0232
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V , ID=-20A
---
4.8
6.0
mΩ
VGS=-2.5V , ID=-20A
---
6.2
8
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.4
-0.6
-1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4.6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-20V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-20V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-20A
---
80
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-10V , VGS=-4.5V , ID=-20A
---
55
75
nC
Qgs
Gate-Source Charge
---
10
---
Qgd
Gate-Drain Charge
---
15
---
Td(on)
Turn-On Delay Time
VDD=-10V , VGS=-4.5V ,
RG=3Ω ID=-20A ,RL=0.5Ω
---
18
---
ns
Tr
Rise Time
---
42
---
Td(off)
Turn-Off Delay Time
---
85
---
Tf
Fall Time
---
23
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
3500
---
pF
Coss
Output Capacitance
---
577
---
Crss
Reverse Transfer Capacitance
---
445
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
VDD=-10V , L=0.5mH , IAS=-10A
100
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
VG=VD=0V , Force Current
---
---
-45
A
ISM
Pulsed Source Current2,6
---
---
-90
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-10A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-10A
,dI/dt=100A/µs, TJ=25℃
47
---
nS
Qrr
Reverse Recovery Charge
---
53
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-10V,VGS=-10V,L=0.1mH,IAS=-10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSD20L75DN
Page 2
www.winsok.tw
Dec.2014
---
-
P-Ch MOSFET
VGS=-1.8V , ID=-10A
---
8.0
10
VGS=-1.5V , ID=-8A
---
12
15.5
VGS=-1.2V , ID=-5A
---
17.6
19.5



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