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WSC5N20A bảng dữ liệu(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

tên linh kiện WSC5N20A
Giải thích chi tiết về linh kiện  N-Ch MOSFET
PDF  6 Pages
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nhà sản xuất  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Trang chủ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSC5N20A bảng dữ liệu(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSC5N20A Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC5N20A Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC5N20A Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC5N20A Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC5N20A Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSC5N20A Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
200
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.
23
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=30A
---
0.52
0.6
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.7
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-6.16
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=2
00V , VGS=0V , TJ=25℃
---
---
25
uA
VDS=
160V , VGS=0V , TJ=55℃
---
---
200
IGSS
Gate-Source Leakage Current
VGS=±
30V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=
50V , ID=2.9A
2.6
---
---
S
Qg
Total Gate Charge (4.5V)
VDS=
160V ,
VGS=
10V ,
ID=
2.9A
---
15
---
nC
Qgs
Gate-Source Charge
---
2.4
---
Qgd
Gate-Drain Charge
---
6.1
---
Td(on)
Turn-On Delay Time
VDD=1
00V
VGS=10V
RG=
24Ω
ID=
2.9A
---
6.4
---
ns
Tr
Rise Time
---
11
---
Td(off)
Turn-Off Delay Time
---
20
---
Tf
Fall Time
---
12
---
Ciss
Input Capacitance
VDS=
25V
VGS=0V
f=1MHz
---
300
---
pF
Coss
Output Capacitance
---
53
---
Crss
Reverse Transfer Capacitance
---
15
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
5
A
VSD
Diode Forward Voltage
VGS=0V , IS=
2.9A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=
100V,VGS=10V,L=0.1mH,IAS=2.9A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSC5N20A
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Single Pulse Avalanche Energy
VGS=10V,L=0.1mH,IAS=2.9A
---
---
46
mJ
Repetitive Avalanche Energy
---
---
4.3
mJ
Avalanche Characteristics
EAR
EAS
VGS=10V,L=0.1mH,IAS=2.9A



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