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AS7C1025B bảng dữ liệu(PDF) 3 Page - Alliance Semiconductor Corporation

tên linh kiện AS7C1025B
Giải thích chi tiết về linh kiện  5V 128K X 8 CMOS SRAM (Center power and ground)
PDF  9 Pages
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AS7C1025B
3/26/04, v. 1.3
Alliance Semiconductor
P. 3 of 9
®
VIL min = -1.0V for pulse width less than 5ns
VIH max = VCC+2.0V for pulse width less than 5ns.
Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
Input voltage
VIH
2.2
–
VCC + 0.5
V
VIL
–0.5
–
0.8
V
Ambient operating temperature
commercial
TA
0–
70
o C
industrial
TA
–40
–
85
o C
DC operating characteristics (over the operating range)1
Parameter
Symbol
Test conditions
-10
-12
-15
-20
Unit
Min Max Min
Max Min Max Min Max
Input leakage current
| I
LI |
VCC = Max, VIN = GND to VCC
–1
–
1
–
1
–
1
µA
Output leakage
current
| I
LO |
VCC = Max, CE = VIH,
Vout = GND to VCC
–1
–
1
–
1
–
1
µA
Operating power
supply current
ICC
VCC = Max
CE
≤ V
IL, f = fMax, IOUT = 0 mA
–
110
–
100
–
90
–
80
mA
Standby power supply
current1
ISB
VCC = Max
CE
≥ V
IH, f = fMax
–50
–
45
–
45
–
40
mA
ISB1
VCC = Max
CE
≥ V
CC–0.2 V,
VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V,
f = 0
–
10
10
10
10
mA
Output voltage
VOL
IOL = 8 mA, VCC = Min
–
0.4
–
0.4
–
0.4
–
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
2.4
–
2.4
–
2.4
–
V
Capacitance (f = 1 MHz, Ta = 25
o C, V
CC = NOMINAL)
2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE, WE, OE
VIN = 0 V
5
pF
I/O capacitance
CI/O
I/O
VIN = VOUT = 0 V
7
pF



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