I8N80 datasheet(1/10 Pages) WXDH

tên linh kiện	I8N80

Giải thích chi tiết về linh kiện	8A 800V N-channel Enhancement Mode Power MOSFET

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ROUM Semiconductor Technology CO.,LTD.

Rev. 1.0

www.roum.cn

Page 1 of 10

8N80

1

Description

These

silicon

N-channel

Enhanced

VDMOSFETs,

is

obtained by the self-aligned planar Technology which

reduce the conduction loss, improve switching performance

and enhance the avalanche energy. Thetransistor can be

used

in

various

power

switching

circuit

forsystem

miniaturization and higher efficiency.Which accords with the

RoHS standard.

2

Features

● Low Gate Charge

● ESD Improved

● Fast Switching

● Low ON Resistance

● 100% Single Pulse Avalanche Energy Test

● 100% Δ

VDS Test

3

Applications

● Electronic Ballast

● ATX Power

● High Voltage H Bridge PWM Motor Drive

8A 800V N-channel Enhancement Mode Power MOSFET

4

Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Drian-Source Voltage

VDS

800

V

Gate-Drain Voltage

VGS

±30

V

Drain Current(continuous)

ID（T=25℃）

（T=100℃）

8

A

5.4

A

Drain Current(Pulsed)

(Note 1)

IDM

32

A

Single Pulse Avalanche Energy

(Note 5)

EAS

350

mJ

Avalanche Energy Repetitive

(Note 1)

EAR

55

mJ

Avalanche Current

(Note 1)

IAR

3.3

A

Peak Diode Recovery dv/dt

(Note 6)

dv/dt

5

V/ns

Total Dissipation

Ta=25℃

Ptot

2

W

TC=25℃

Ptot

120

W

Junction Temperature

Tj

150

℃

storage Temperature

Tstg

-55～150

℃

Maximum Temperature for soldering

TL

300

℃

4.2 Thermal Characteristics

PARAMETER

SYMBOL

VALUE

UNIT

Thermal Resistance Junction to Case-sink

RthJC

1.04

℃/W

Thermal Resistance Junction to Ambient

RthJA

62.5

℃/W

VDSS = 800V

RDS(on) （TYP)= 1.1Ω

ID = 8A

TO-220C

1

2

3

4

5

6

7

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6

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Số phần tương tự - I8N80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Jiangsu Donghai Semicon...	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET

More results

Mô tả tương tự - I8N80

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	F8N60	879Kb / 12P	8A 600V N-channel Enhancement Mode Power MOSFET
	F8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET
	I7N80	899Kb / 11P	7A 800V N-channel Enhancement Mode Power MOSFET
	I8N80	779Kb / 10P	8A 800V N-channel Enhancement Mode Power MOSFET

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