PJM2307PSA datasheet(2/6 Pages) PJSEMI

tên linh kiện	PJM2307PSA

Giải thích chi tiết về linh kiện	P- Enhancement Mode Field Effect Transistor

PDF	6 Pages

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Electrical Characteristics

TA=25℃ unless otherwise noted

2 / 6

PJM2307PSA

P- Enhancement Mode Field Effect Transistor

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

-V(BR)DSS

VGS = 0V, ID =-250µA

Gate-Source Leakage

IGSS

=0V, VGS =±20V

±100

VDS =-30V, VGS =0V

Zero Gate Voltage Drain Current

-IDSS

µA

VGS =-4.5V, ID =-2.5A

110

138

Drain-Source On-State Resistance

Note2

DS(

on)

VGS =-10V, ID =-3.5A

mΩ

Forward Transconductance

Note2

VDS =-10V, ID =-3.5A

Input Capacitance

Ciss

340

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

Total Gate Charge

4.1

Gate-Source Charge

Qgs

1.3

Gate-Drain Charge

Qgd

VDS =-15V,VGS =-4.5V,

ID =-2.5A

1.8

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDD=-15V,

RL=15Ω, ID =-1A,

VGEN=-4.5V,Rg=1Ω

Body Diode Voltage

-VSD

-0.75A, ,VGS =0

Notes:

1. Surface mounted on FR4 board，t ≤ 10 sec.

2. Pulse Test :pulse width < 300µs, duty cycle ≤2%.

VDS =VGS, ID = -250µA

Gate threshold voltage Note2

-VGS(th)

Static Characteristics

Dynamic Characteristics

Switching Characteristics

Source-Drain Diode characteristics

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Revision:1.1 Jun-2019

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