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PWD13F60 bảng dữ liệu(PDF) 10 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  High-density power driver -high voltage full bridge with integrated gate driver
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PWD13F60 bảng dữ liệu(HTML) 10 Page - STMicroelectronics

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Device characterization values
PWD13F60
10/26
DocID030865 Rev 2
5
Device characterization values
Table 7, Table 8 and electrical characteristics curves (from Figure 4 to Figure 12) contained
in this section represent typical values based on characterization and simulation results.
Table 7. Power MOSFET
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
MOSFET dynamic
Qg
Total gate charge
VGS = 10 V, TJ = 25 °C
VDS = 480 V, ID = 3 A
-26
-
nC
Source-drain diode
trr
Diode reverse recovery time
ISD = 3 A,
VS = 100 V,
di/dt = 100 A/µs, TJ = 25 °C
-93
-
ns
Qrr
Diode reverse recovery charge
-
376
-
nC
IRRM
Diode reverse recovery current
-
8.1
-
A
Table 8. Inductive load switching characteristics
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
t(on)(1)
Turn-on time
VS = 300 V,
VCC = VBO = 15 V,
IOUT = 3 A, TJ = 25 °C,
see Figure 3
-280
-
ns
tC(on)(2)
Crossover time (on)
-
75
-
ns
t(off)(1)
Turn-off time
-
360
-
ns
tC(off)(2)
Crossover time (off)
-
105
-
ns
Eon
Turn-on switching losses
-
115
-
µJ
Eoff
Turn-off switching losses
-
35
-
µJ
DT
Suggested minimum dead time
-
-
270
ns
1.
t(on) and t(off) include the propagation delay time of the internal driver.
2.
tC(on) and tC(off) are the switching times of the MOSFET itself under the internally given gate driving conditions.



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