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BAS85 bảng dữ liệu(PDF) 1 Page - EIC discrete Semiconductors

tên linh kiện BAS85
Giải thích chi tiết về linh kiện  SCHOTTKY BARRIER DIODE
PDF  2 Pages
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nhà sản xuất  EIC [EIC discrete Semiconductors]
Trang chủ  http://www.eicsemi.com
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BAS85 bảng dữ liệu(HTML) 1 Page - EIC discrete Semiconductors

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BAS85
SCHOTTKY BARRIER DIODE
FEATURES :
* For general purpose applications.
* This diode features low turn-on voltage.
* This device isprotected by a PN junction guard
guard ring against excessive voltage, such as
electrostatic discharges
* This diode is also available in the DO-35 case
with type designation BAT85.
* Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol
Value
Unit
Continuous Reverse Voltage
VR
V
Continuous Forward Current
IF
mA
Peak Forward Current
IFM
mA
Forward Surge Current (tp < 1s)
IFSM
mA
Power Dissipation (Infinite Heatsink)
PD
mW
Thermal Resistance Junction to Ambient Air
RθJA
°C/W
Junction Temperature
TJ
°C
Storage temperature range
TSTG
°C
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V(BR)R
30
-
-
V
Reverse Current
IR
VR = 25 V
-
0.2
2.0
μA
IF = 1mA
-
-
0.32
Forward Voltage
IF = 10mA
-
-
0.40
Pulse Test tp <300
μs ,
δ <2%
IF = 30mA
-
0.5
-
IF = 100mA
-
-
0.80
Diode Capacitance
Cd
VR = 1V, f = 1MHz
-
-
10
pF
IF =10mA to IR = 10mA ,
measured at IR = 1mA
Page 1 of 2
Rev. 03 : July 16, 2010
Test Condition
Parameter
Reverse Recovery Time
VF
Trr
V
ns
IR = 10 µA (pulsed)
5
-
-
125
-55 to + 150
30
200
(1)
300
(1)
600
(1)
200
(1)
430
(1)
Dimensions in inches and ( millimeters )
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.098 (2.50)
Max.
0.079 (2.00)Min.
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