MJE18006 MJF18006

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

VBE(sat)

—

—

0.83

0.94

1.2

1.3

Vdc

Collector–Emitter Saturation Voltage

(IC = 1.3 Adc, IB = 0.13 Adc)

(TC = 125_C)

(IC = 3.0 Adc, IB = 0.6 Adc)

(TC = 125_C)

VCE(sat)

—

—

—

—

0.25

0.27

0.35

0.4

0.6

0.65

0.7

0.8

Vdc

DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)

(TC = 125_C)

(TC = 125_C)

(TC = 25 to 125_C)

hFE

14

—

6.0

5.0

11

10

—

32

10

8.0

17

22

34

—

—

—

—

—

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

14

—

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

75

120

pF

Input Capacitance (VEB = 8.0 V)

Cib

—

1000

1500

pF

Dynamic Saturation Voltage:

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

(IC = 1.3 Adc

IB1 = 130 mAdc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE(dsat)

—

—

5.5

12

—

—

Volts

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

IB1 = 130 mAdc

VCC = 300 V)

3.0

µs

(TC = 125°C)

—

—

3.0

7.0

—

—

rising IB1 reaches 90% of

final IB1

(see Figure 18)

(IC = 3.0 Adc

IB1 = 0.6 Adc

VCC = 300 V)

1.0

µs

(TC = 125°C)

—

—

9.5

14.5

—

—

IB1 = 0.6 Adc

VCC = 300 V)

3.0

µs

(TC = 125°C)

—

—

2.0

7.5

—

—

SWITCHING CHARACTERISTICS: Resistive Load (D.C.

v 10%, Pulse Width = 20 µs)

Turn–On Time

(IC = 3.0 Adc, IB1 = 0.6 Adc,

IB2 = 1.5 Adc, VCC = 300 V)

(TC = 125°C)

ton

—

—

90

100

180

—

ns

Turn–Off Time

(TC = 125°C)

toff

—

—

1.7

2.1

2.5

—

µs

Turn–On Time

(IC = 1.3 Adc, IB1 = 0.13 Adc,

IB2 = 0.65 Adc, VCC = 300 V)

(TC = 125°C)

ton

—

—

200

130

300

—

ns

Turn–Off Time

(TC = 125°C)

toff

—

—

1.2

1.5

2.5

—

µs

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

(IC = 1.5 Adc, IB1 = 0.13 Adc,

IB2 = 0.65 Adc)

(TC = 125°C)

tfi

—

—

100

120

180

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

1.5

1.9

2.5

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

220

230

350

—

ns

Fall Time

(IC = 3.0 Adc, IB1 = 0.6 Adc,

IB2 = 1.5 Adc)

(TC = 125°C)

tfi

—

—

85

120

150

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

2.15

2.75

3.2

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

200

310

300

—

ns