LP3407LT3G datasheet(2/5 Pages) LRC

2 / 5 page

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μA)

Zero Gate Voltage Drain Current

(VGS = 0, VDS = -24 V)

(VGS = 0, VDS = -24 V,TJ =55℃)

Gate Leakage Current

(VDS =0V, VGS =±20V)

Gate Threshold Voltage

(VDS = VGS, ID = -250μA)

Static Drain–Source On–State Resistance

(VGS =-10V, ID =-4.1A)

(VGS =-10V, ID =-4.1A, TJ =125°C)

(VGS =-4.5V, ID =-3A)

Forward Transconductance

(VDS =-5V, ID =-4A)

Forward Voltage

(VGS = 0 V, IS = -1A)

Maximum Body-Diode Continuous Current

μA

100

Symbol

Min.

-1

-30

VGS(th)

-1

-1.4

-2.1

IDSS

-5

±100

IGSS

Unit

-0.7

VSD

VBRDSS

Characteristic

STATIC PARAMETERS

Max.

Typ.

8.8

-1

-2

gfs

RDS(on)

mΩ

Leshan Radio Company, LTD.

2/5

LP3407LT1G

30V P-Channel Enhancement-Mode MOSFET

Dynamic

Input Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Output Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Reverse Transfer Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Gate resistance

(VGS =0V, VDS =0V, f=1MHz)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Body Diode Reverse Recovery Time

(IF =-4A, dI/dt=100A/µs)

Body Diode Reverse Recovery Charge

(IF =-4A, dI/dt=100A/µs)

Qgd

1.26

2.98

td(off)

10.4

5.3

Ciss

Coss

534

(VDS = -15V, RL= 3.6

Ω,VGS = -10V,RG = 3.1Ω)

td(on)

Qg(4.5V)

trr

Qrr

Qg(10V)

(VDS =-15V,

ID =-4A)

11.4

Qgs

2.3

Crss

5.6

Rev.E Jul. 2020

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