LP3401ALT3G datasheet(2/3 Pages) LRC

2 / 3 page

Parameter

Symbol

Min.

Typ.

Max.

Unit

Drain−to−Source Breakdown

Drain-Source Breakdown Voltage

BVDSS

-30

–

Zero Gate Voltage Drain Current

IDSS

–

-1

Gate-Body leakage current

IGSS

–

±100

Gate Threshold Voltage

VGS(th)

-0.6

-1.3

On state drain current

ID(ON)

-25

–

100

–

110

–

130

Forward Transconductance

gFS

Diode Forward Voltage

VSD

-0.7

-1

Maximum Body-Diode Continuous

Current

-2.2

DYNAMIC PARAMETERS

Input Capacitance

Ciss

1020

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

–

9.2

–

Gate−to−Source Gate Charge

QGS

–

3.2

–

Gate−to−Drain Charge

QGD

–

2.3

–

Turn−On Delay Time

td(on)

–

Rise Time

–

Turn−Off Delay Time

td(off)

–

Fall Time

–

Conditions

VGS=-4.5V, VDS=-

15V, ID=-5.3A

，

VGS=-10V, VDS=-15V,

RL=3.6

, R

GEN=6

VGS=0V, VDS=-15V,

f=1MHz

IS=-1A,VGS=0V

VDS=-5V, ID=-5A

VGS=-2.5V, ID=-2A

VGS=-4.5V, ID=-4A

VGS=-10V, ID=-4.2A

VGS=-4.5V, VDS=-5V

VDS=VGS, ID=-250μA

VDS=0V, VGS=±12V

VDS=-24V, VGS=0V

ID=-250μA, VGS=0V

●ELECTRICAL CHARACTERISTICS (Ta= 25℃)

STATIC

Static Drain-Source On-

Resistance

RDS(ON)

SWITCHING PARAMETERS

LESHAN RADIO COMPANY, LTD.

LP3401ALT1G

Ω

Rev.A 2/3

μA

–

Ω

Sep,2017

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