1. FEATURES

●

VDS =-20V

●

Advanced trench process technology

●

High Density Cell Design For Ultra Low On-Resistance

●

Fully Characterized Avalanche Voltage and Current

●

Improved Shoot-Through FOM

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

2. APPLICATIONS

●

Simple Drive Requirement

●

Small Package Outline

●

Surface Mount Device

3. DEVICE MARKING AND ORDERING INFORMATION

LP2128LT3G

PA2

10000/Tape&Reel

LP2128LT1G

20V P-Channel Enhancement-Mode MOSFET

Device

Marking

Shipping

LP2128LT1G

PA2

3000/Tape&Reel

SOT23(TO-236)

Leshan Radio Company, LTD.

4. MAXIMUM RATINGS(Ta = 25ºC)

– Continuous TA = 25°C

– Pulsed

5. THERMAL CHARACTERISTICS

Total Device Dissipation FR–5 Board@Ta=25℃

Thermal Resistance,

Junction–to–Ambient

Junction and Storage temperature

1.Repetitive Rating: Pulse width limited by the maximum junction temperature

Parameter

Symbol

Limits

Drain Current(Note 1)

A

ID

-6

Unit

Drain–Source Voltage

VDSS

-20

V

Gate–to–Source Voltage

VGS

±12

V

PD

1100

mW

RΘJA

110

ºC/W

IDM

-24

Parameter

Symbol

Limits

Unit

Avalanche Current(L=0.1mH)

Avalanche Energy(L=0.1mH)

TJ,Tstg

−55

∼+150

ºC

IAS

12

A

EAS

7.3

mJ

Rev.B Jan. 2020

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