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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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TS7906CI bảng dữ liệu(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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TS7906CI bảng dữ liệu(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
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4 / 7 page  TS7900 series 4-7 2003/12 rev. A TS7912 Electrical Characteristics (Vin=-19V, Iout=500mA, 0 oC ≤Tj≤125 oC, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Unit Tj=25 oC -11.53 -12 -12.48 Output Voltage Vout -14.5V ≤Vin≤-27V, 10mA ≤Iout≤1A, PD ≤15W -11.42 -12 -12.60 V -14.5V ≤Vin≤-30V -- 10 240 Line Regulation REGline Tj=25 oC -15V ≤Vin≤-19V -- 3 120 10mA ≤Iout≤1A -- 12 240 Load Regulation REGload Tj=25 oC 250mA ≤Iout≤750mA -- 4 120 mV Quiescent Current Iq Tj=25 oC, Iout=0 -- 4 8 -14.5V ≤Vin≤-30V -- -- 1 Quiescent Current Change ∆lq 10mA ≤Iout≤1A -- -- 0.5 mA Output Noise Voltage Vn 10Hz ≤f≤100KHz, Tj=25 oC -- 75 -- uV Ripple Rejection Ratio RR f=120Hz, 15V ≤Vin≤25V 55 70 -- dB Voltage Drop Vdrop Iout=1.0A, Tj=25 oC -- 2 -- V Peak Output Current Io peak Tj=25 oC -- 2.1 -- A Temperature Coefficient of Output Voltage ∆Vout/∆Tj Iout=10mA, 0 oC ≤Tj≤125 oC -- -1 -- mV/ oC TS7915 Electrical Characteristics (Vin=-23V, Iout=500mA, 0 oC ≤Tj≤125 oC, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Unit Tj=25 oC -14.42 -15 -15.60 Output Voltage Vout -17.5V ≤Vin≤-30V, 10mA ≤Iout≤1A, PD ≤15W -14.28 -15 -15.75 V -17.5V ≤Vin≤-30V -- 12 300 Line Regulation REGline Tj=25 oC -18V ≤Vin≤-22V -- 3 150 10mA ≤Iout≤1A -- 12 300 Load Regulation REGload Tj=25 oC 250mA ≤Iout≤750mA -- 4 150 mV Quiescent Current Iq Tj=25 oC, Iout=0 -- 4 8 -17.5V ≤Vin≤-30V -- -- 1 Quiescent Current Change ∆lq 10mA ≤Iout≤1A -- -- 0.5 mA Output Noise Voltage Vn 10Hz ≤f≤100KHz, Tj=25 oC -- 90 -- uV Ripple Rejection Ratio RR f=120Hz, -18V ≤Vin≤-28V 54 69 -- dB Voltage Drop Vdrop Iout=1.0A, Tj=25 oC -- 2 -- V Peak Output Current Io peak Tj=25 oC -- 2.1 -- A Temperature Coefficient of Output Voltage ∆Vout/∆Tj Iout=10mA, 0 oC ≤Tj≤125 oC -- -1 -- mV/ oC Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as possible, and thermal effects must be taken into account separately. This specification applies only for DC power dissipation permitted by absolute maximum ratings. |
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