RN2601~RN2606

2001-06-05

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2601,RN2602,RN2603

RN2604,RN2605,RN2606

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in SM6 (super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1601~1606

Equivalent Circuit and Bias Resistor Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2601~2606

−50

V

RN2601~2604

−10

Emitter-base voltage

RN2605, 2606

−5

V

Collector current

−100

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN2601~2606

−55~150

°C

*

Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-3N1A

Weight: 0.015g

Type No.

R1 (kΩ)

R2 (kΩ)

RN2601

4.7

4.7

RN2602

10

10

RN2603

22

22

RN2604

47

47

RN2605

2.2

47

RN2606

4.7

47

Unit in mm