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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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AMC3306M25 bảng dữ liệu(PDF) 8 Page - Texas Instruments |
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AMC3306M25 bảng dữ liệu(HTML) 8 Page - Texas Instruments |
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8 / 29 page  8 AMC3306M25 SBAS996 – MAY 2020 www.ti.com Product Folder Links: AMC3306M25 Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated 6.9 Electrical Characteristics all minimum and maximum specifications are at TA = –40°C to 125°C, VDD = 3.0 V to 5.5 V, INP = –250 mV to 250 mV, INN = 0 V, and sinc 3 filter with OSR = 256 (unless otherwise noted); typical values are at T A = 25°C, CLKIN = 20 MHz, VDD = 3.3 V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ANALOG INPUTS VClipping Maximum differential voltage input range (VINP-VINN) –320 320 mV FSR Specified linear full-scale range (VINP–VINN) –250 250 mV VCM Operatiing common-mode input voltage (VINP-VINN)/2 to HGND –0.16 1 V IIB Input bias current INP = INN = HGND; IIB = (IIBP + IIBN) / 2 –41 –30 –24 μA TCIIB Input bias current drift ±1 nA/ ℃ IIO Input offset current IIO = IIBP – IIBN ±5 nA CIN Single-ended input capacitance INN = HGND, fIN = 310 kHz 2 pF CIND Differential input capacitance fIN = 310 kHz 1 pF RIN Single-ended input resistance INN = HGND 19 kΩ RIND Differential input resistance 22 kΩ DIGITAL INPUTS/OUTPUTS IIN Input leakage current GND ≤ VIN ≤ VDD 0 7 μA CIN Input capacitance 4 pF VIH High-level input voltage 0.7 × VDD VDD + 0.3 V VIL Low-level input voltage –0.3 0.3 × VDD V CLOAD Output load capacitance 15 30 pF VOH High-level output voltage IOH = –20 µA VDD – 0.1 V IOH = –4 mA VDD – 0.4 VOL Low-level output voltage IOL = 20 µA 0.1 V IOL = 4 mA 0.4 fCLKIN Input clock frequency 5 20 21 MHz DutyCLKIN Duty cycle 5 MHz ≤ fCLKIN ≤ 21 MHz 40% 50% 60% CMTI Common-mode transient immunity 75 130 kV/μs ACCURACY EG Gain error TA = 25°C –0.2% ±0.005% 0.2% TCEG Gain error thermal drift –40 ±20 40 ppm/°C EO Offset error TA = 25°C –100 ±4.5 100 µV TCEO Offset error thermal drift –1 1 µV/°C DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB INL Integral nonlinearity Resolution: 16 bits –4 ±1 4 LSB SNR Signal-to-noise ratio fIN = 1 kHz 82 86 dB SINAD Signal-to-noise + distortion fIN = 1 kHz 81.9 85.7 dB THD Total harmonic distortion 5 MHz ≤ fCLKIN ≤ 21 MHz, fIN = 1 kHz –98 –86 dB SFDR Spurious-free dynamic range fIN = 1 kHz 83 100 dB CMRR Common-mode rejection ratio fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max –95 dB fIN from 0.1 Hz to 50 kHz, VCM min ≤ VIN ≤ VCM max, |VINP - VINN| = 500 mVPP –95 PSRR Power-supply rejection ratio VDD from 3.0 V to 5.5 V, at dc –103 dB INP = INN = HGND, VDD from 3.0 V to 5.5 V, 10 kHz / 100 mV ripple –92 POWER SUPPLY IDD Low-side supply current 4.5 V ≤ VDD ≤ 5.5 V, no external load 28.5 31 mA 3.0 V ≤ VDD ≤ 3.6 V, no external load 27.5 30 4.5 V ≤ VDD ≤ 5.5 V, 1 mA external load on HLDO TBD TBD 3.0 V ≤ VDD ≤ 3.6 V, 1 mA external load on HLDO TBD TBD |
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