FPD750P100 datasheet(2/3 Pages) FILTRONIC

2 / 3 page

FPD750P100

0.5W PACKAGED POWER PHEMT

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Released: 6/27/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

RECOMMENDED BIAS CONDITIONS:

Drain-Source Voltage:

5V to 8V

Drain-Source Current:

33% to 50% IDSS

•

ABSOLUTE MAXIMUM RATINGS1

Parameter

Symbol

Test Conditions

Min

Max

Units

Drain-Source Voltage

VDS

-3V < VGS < +0V

Gate-Source Voltage

VGS

0V < VDS < +8V

-3

Drain-Source Current

IDS

For VDS > 2V

IDSS

Gate Current

Forward or reverse current

7.5

RF Input Power2

Under any acceptable bias state

175

Channel Operating Temperature

TCH

Under any acceptable bias state

175

ºC

Storage Temperature

TSTG

Non-Operating Storage

-40

150

ºC

Total Power Dissipation

PTOT

See De-Rating Note below

2.3

Gain Compression

Comp.

Under any bias conditions

Simultaneous Combination of Limits3

2 or more Max. Limits

1TAmbient = 22°C unless otherwise noted

2Max. RF Input Limit must be further limited if input VSWR > 2.5:1

3Users should avoid exceeding 80% of 2 or more Limits simultaneously

Notes:

•

Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.

•

Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.

•

Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where

PDC: DC Bias Power

PIN: RF Input Power

POUT: RF Output Power

•

Absolute Maximum Power Dissipation to be de-rated as follows above 22

°C:

PTOT= 2.3W – (0.0147W/°C) x THS

where THS = heatsink or ambient temperature above 22°C

Example: For a 85

°C heatsink temperature: PTOT = 2.3W – (0.0147 x (85 – 22)) = 1.37W

•

HANDLING PRECAUTIONS

To avoid damage to the devices care should be exercised during handling. Proper Electrostatic

Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and

testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body

Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.

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