SEMICONDUCTOR

TECHNICAL DATA

MMBTA64

2012. 10. 31

1/3

Revision No : 0

SOT– 23

1

3

2

Darlington Transistors

PNP Silicon

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

–30

Vdc

Collector–Base Voltage

VCBO

–30

Vdc

Emitter–Base Voltage

VEBO

–10

Vdc

Collector Current – Continuous

IC

–500

mAdc

DEVICE MARKING

MMBTA64 = 2V

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

R JA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

R JA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –100 µAdc)

V(BR)CEO

–30

–

Vdc

Collector Cutoff Current (VCB = –30 Vdc)

ICBO

–

–100

nAdc

Emitter Cutoff Current (VEB = –10 Vdc)

IEBO

–

–100

nAdc

ON CHARACTERISTICS

DC Current Gain(3)

(IC = –10 mAdc, VCE

MMBTA63

)

c

d

V

0

.

5

–

=

(IC = –10 mAdc, VCE

)

c

d

V

0

.

5

–

=

(IC = –100 mAdc, VCE

)

c

d

V

0

.

5

–

=

(IC = –100 mAdc, VCE

)

c

d

V

0

.

5

–

=

hFE

5,000

10,000

10,000

20,000

–

–

–

–

–

Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)

VCE(sat)

–

–1.5

Vdc

Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)

VBE(on)

–

–2.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)

fT

125

–

MHz

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤300

µs, Duty Cycle ≤2.0%.

MMBTA64

MMBTA63

MMBTA64