MGS13002D datasheet(3/6 Pages) ONSEMI

tên linh kiện	MGS13002D

Giải thích chi tiết về linh kiện	Insulated Gate Bipolar Transistor

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MGS13002D

Motorola IGBT Device Data

Figure 1. Saturation Characteristics

Figure 2. Saturation Characteristics

Figure 3. Saturation Characteristics

Figure 4. Collector–To–Emitter Saturation

Voltage versus Case Temperature

Figure 5. Diode Forward Voltage Drop

Figure 6. Diode Forward Voltage versus Case

Temperature

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

2.5

2.0

1.5

1.0

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

1.5

0.5

TC, CASE TEMPERATURE (°C)

–25

2.0

1.8

1.7

1.6

1.5

1.4

0.5

1.5

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

TC, CASE TEMPERATURE (°C)

125

100

1.0

0.5

1.0

2.0

2.5

100

125

150

2.0

150

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

2.5

2.0

1.5

1.0

0.5

1.9

TC = 25°C

VGE = 15 V

12.5 V

10 V

8.0 V

TC = 150°C

VGE = 15 V

12.5 V

10 V

8.0 V

TC = –20°C

VGE = 15 V

12.5 V

10 V

8.0 V

IC = 700 mA

VG = 15 V

500 mA

300 mA

TC = 150°C

–20

°C

IC = 500 mA

300 mA

100 mA

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