FTC5658 datasheet(1/5 Pages) FS

tên linh kiện	FTC5658

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SEMICONDUCTOR

TECHNICAL DATA

FTC5658

2018. 08. 29

1/5

Revision No : 1

SOT–723

ORDERING INFORMATION

SOT−723

MARKING

DIAGRAM

1

2

3

XX

XX = Specific Device Code

BR = FTC5658R

COLLECTOR

3

1

BASE

2

EMITTER

NPN Silicon General

Purpose Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT-723 package which is

designed for low power surface mount applications, where board

space is at a premium.

Features

• Reduces Board Space

• High hFE, 210−460 (typical)

• Low VCE(s

at) < 0.5 V

• ESD Performance: Human Body Model; > 2000 V,

Machine Model; > 200 V

MAXIMUM RATINGS (TA = 25℃)

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

50

Vdc

Collector-Emitter Voltage

V(BR)CEO

50

Vdc

Emitter-Base Voltage

V(BR)EBO

5.0

Vdc

Collector Current−Continuous

IC

100

mAdc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation (Note 1)

PD

260

mW

Junction Temperature

TJ

150

°C

Storage Temperature Range

Tstg

−55 ~ + 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass e

poxy printed circuit board using the

minimum recommended footprint.

1

2

3

Device

Package

Shipping

8000/Tape & Reel

FTC5658

SOT−723

BQ = FTC5658Q

Số phần tương tự - FTC5658

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