1150MP

150 Watts, 50 Volts, Class C

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed

systems in the frequency band 1025-1150 MHz. The device has gold thin-film

metallization for proven highest MTTF. The transistor includes input prematch for

broadband capability.

Low thermal resistance package reduces junction

temperature, extends life.

CASE OUTLINE

55FW-1

ABSOLUTE MAXIMUM RATINGS

250 Watts Peak

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

60 Volts

BVebo Emitter to Base Voltage

4.0 Volts

Ic

Collector Current

6.0 Amps Peak

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

F= 1025-1150 MHz

140

150

W

Power Input

Vcc = 50 Volts

30

W

Power Gain

PW = 10

µsec, DF = 1%

7.0

7.5

dB

ηc

Efficiency

35

38

%

VSWR

Load Mismatch Tolerance

F = 1090 MHz

10:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

BVebo

Emitter to Base Breakdown

Ie = 1 mA

3.5

V

BVces

Collector to Emitter Breakdown

Ic = 10mA

65

V

Hfe

DC Current Gain

Vce = 5V, Ic = 500 mA

15

120

Cob

Output Capacitance

Vcb = 50 V, f = 1 MHz

16

pF

Thermal Resistance

Tc=25ºC

0.6

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Initial Issue June, 1994

Advanced Power Technology reserves the right to change, without notice, the specifications and information