28F640C3 datasheet(11/18 Pages) INTEL

11 / 18 page

28F800C3, 28F160C3, 28F320C3, 28F640C3 Specification Udpate

Errata

4) Wait 2 ms after a VPP transition to access the flash device, as shown here.

Status:

This erratum affects all 0.18µ m 28F320C3 devices. Root cause has been identified and this erratum

may be fixed in a future stepping of the product.

28F640C3xC Maximum ICCS and ICCD Change

Problem:

On the 0.18µm 28F640C3xC devices, the maximum ICCS and ICCD deviates from the published

specification and increases from 15 µA to 20 µA. The following table shows the revised ICCS and

ICCD specifications.

Implication:

The increased current requirements may result in a nominal increase in power drawn from the

power supply.

Workaround:

None

Status:

This erratum affects all 0.18µ m 28F640C3xC devices. Root cause has been identified and this

erratum may be fixed in a future stepping of the product.

CE#

WE#

2ms

Sym

Parameter

VCC

2.7V –3.6V

Unit

Test Conditions

VCCQ

2.7V –3.6V

Note

Type

Max

ICCS

VCC Standby Current

1,7

µA

VCC =VCCMax

CE# = RP# = VCCQ

or during Program/ Erase

Suspend

WP# = VCCQ or GND

ICCD

VCC Deep Power-Down

Current

1,7

µA

VCC =VCCMax

VCCQ =VCCQMax

VIN =VCCQ or GND

RP#= GND ± 0.2V

NOTE:

1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC,TA =+25 °C.

2. The test conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or

VCCQ voltage listed at the top of each column.

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