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TC6321 bảng dữ liệu(PDF) 1 Page - Microchip Technology

tên linh kiện TC6321
Giải thích chi tiết về linh kiện  N- and P-Channel Enhancement-Mode MOSFET Pair
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Trang chủ  http://www.microchip.com
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TC6321
 2017 Microchip Technology Inc.
DS20005724A-page 1
Features
• Integrated Gate-to-Source Resistor
• Integrated Gate-to-Source Zener Diode
• Low Threshold
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speeds
• Free from Secondary Breakdown
• Low Input and Output Leakage
• Independent, Electrically Isolated N- and
P-Channels
• 8-Lead Very Thin Plastic Dual Flat, No Lead,
6x 5mm VDFN Package
Applications
• High-Voltage Pulser
•Amplifiers
•Buffers
• Piezoelectric Transducer Drivers
• General-Purpose Line Drivers
• Logic-Level Interfaces
Package Types
Description
The TC6321 consists of high-voltage, low-threshold
N-channel and P-channel MOSFETs in an 8-Lead
VDFN package. Both MOSFETs have integrated
gate-to-source
resistors
and
gate-to-source
Zener diode clamps, which are desired for high-voltage
pulser applications.
The TC6321 is a complimentary,
high-speed,
high-voltage,
gate-clamped
N-
and
P-channel
MOSFET pair, which utilizes an advanced vertical
DMOS structure and the well-proven silicon-gate
manufacturing process. This combination produces a
device with the power-handling capabilities of bipolar
transistors and with the high-input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-
induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low
threshold voltage, high breakdown voltage, high input
impedance, low input capacitance and fast switching
speeds are desired.
TC6321
6x 5 VDFN*
* Includes Dual Exposed Thermal Pads (EP);
see Table 3-1.
DN
DN
DP
DP
SN
GN
SP
GP
3
4
2
1
5
6
7
8
N- and P-Channel Enhancement-Mode MOSFET Pair


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