ZXMHC10A07T8

SEMICO NDUC TORS

ISSUE 2 - JUNE 2005

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a) (d)

94.5

°C/W

Junction to Ambient

(b) (d)

73.3

°C/W

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with

the heat sink split into two equal areas one for each drain connection.

(b) For a device surface mounted on FR4 PCB measured at t

10 sec.

(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.

Refer to transiennt thermal impedance graph.

(d) For device with one active die.

THERMAL RESISTANCE

PARAMETER

SYMBOL

N-channel

P-channel

UNIT

Drain-Source Voltage

100

-100

V

Gate-Source Voltage

20

20

V

Continuous Drain Current @V

(b) (d)

(b) (d)

(a) (d)

1.1

0.9

1.0

-0.9

-0.8

-0.8

A

A

A

Pulsed Drain Current

(c)

5.2

-4.5

A

Continuous Source Current (Body Diode)

(b)

2.3

-2.2

A

Pulsed Source Current (Body Diode)

(c)

5.2

-4.5

A

(a) (d)

Linear Derating Factor

1.3

10.4

W

mW/°C

(b) (d)

Linear Derating Factor

1.3

10.4

W

mW/°C

Operating and Storage Temperature Range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS